In order to real-time grasp of various physiological signals of athletes during sports, a high-performance flexible pressure sensor that can monitor various physiological signals and human motion was designed. Porous polydimethylsiloxane (PDMS) foam prepared by the sacrificial template method and graphene as raw materials were used to prepare a flexible pressure sensor with wide working range (0–100 kPa), ultra-high sensitivity (the average sensitivity in the range of 0–30 kPa is 17.9 kPa−1, the sensitivity in the range of 30–100 kPa reaches 79 kPa−1), fast response ability (response time is 20 ms) and long-term work stability (more than 10 000 cycles). The excellent performance of this pressure sensor depends on the use of PDMS foam with a high elastic modulus and the graphene loading level is controlled to an appropriate ratio. Finally, we used the conductive porous PDMS foam based flexible pressure sensor to demonstrate accurate and real-time monitoring of athletes’ tiny physiological signals (including pulse and electrocardiograph signals), vocalization and facial emotions, as well as violent joint and limb movements (including joint bending, walking, squats, jogging, and jumping), showing the potential in coaching athletes.
Graphene with exceptional properties has attracted significant attention in many fields. Chemical vapor deposition has been a vital method for synthesizing high-quality graphene with controlled size, thickness, and quality. Intrinsic graphene is a zero bandgap 2D material with weak ambipolar behavior, and the transistors based on such graphene show a low on/off current ratio. It is important to achieve the controllable preparation of graphene with adjustable electrical properties. Doping the graphene with heteroatoms is a standard method to achieve this goal. Here, we demonstrate that high-quality N-doped graphene can be prepared using soybeans as the carbon source. We can control the preparation of high-quality N-doped graphene on Cu catalyst using soybean as the carbon source, including, N-doped single-crystal graphene domains and N-doped monolayer films. Electrical measurements show that the N-doped graphene exhibits an n-type behavior, indicating that doping can effectively modulate graphene’s electrical properties. Based on the high-quality N-doped graphene, we demonstrate its applications in flexible supercapacitors and skin-like electrophysiological monitors, showing high application value in wearable electronic devices.
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