Using electrochemical etching of a polycrystalline 3C-SiC target and subsequent ultrasonic treatment in water solution, we have fabricated suspensions of 3C-SiC nanocrystallites that luminesce. Transmission electron microscope observations show that the 3C-SiC nanocrystallites, which uniformly disperse in water, have sizes in the range of 1-6 nm. Photoluminescence and photoluminescence excitation spectral examinations show clear evidence for the quantum confinement of 3C-SiC nanocrystallites with the emission band maximum ranging from 440 to 560 nm. Tunable, composite polystyrene/SiC film can be made by adding polystyrene to a toluene suspension of the 3C-SiC nanocrystallites and then coating the resulting solution onto a Si wafer.
We have proved that Cs2SnI6−xBrx (x = 0–6) can be eutectic in the whole composition, and the eutectic phase has the similar cubic symmetry with both of the end phases (space group of Fm3¯m). The lattice constant decreases from around 11.67 Å (x = 0) to around 10.83 Å (x = 6). Hall-plot analysis shows that the strain varies sharply near the two end materials, while the strain is almost independent of Br content at the middle Br content. The bandgap, on the other hand, increases from 1.26 eV to 2.93 eV with increasing the Br content, which might be expected in fabricating the continuous junction solar cells.
Inorganic perovskite CsPbBr3 is a material used for fabricating highly efficient and stable perovskite solar cells. In this work, a two-step infiltration-spinning method is proposed to obtain CsPbBr3 films with pure phase. Phase transformations between CsPb2Br5, CsPbBr3 and Cs4PbBr6 are investigated by controlling the contact time between the CsBr solution and the PbBr2 substrate. CsPbBr3 films with large grain sizes are obtained after high temperature post-treatment. The CsPbBr3-based solar cells show a high efficiency (approximately 7%) with a short-circuit current density of 6.68 mA cm−2, an open-circuit voltage of 1.47 V and a fill factor of 70.9% under standard solar illumination.
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