A new low-loss, low-temperature sinterable microwave dielectric material ZnTiNbTaO 8 was investigated for the first time. Single phase ZnTiNbTaO 8 was obtained by the conventional solid-state route and sintered at 1120°C-1200°C for 6 h. Theoretical density, packing fraction, bond valence, and oxygen octahedron distortion were calculated. The excellent microwave dielectric properties of e = 36.3, Qf = 67 000 GHz, τ f = À57.66 310 À6 /°C were obtained from the new ZnTiNbTaO 8 materials sintered at 1140°C for 6 h.
A low sintering temperature microwave dielectric material ZnZrNb2O8 was reported. It exhibits a monoclinic structure, belongs to the space group P2/c (C2h4), and Z = 1. The dielectric constant increased with increasing relative density. The Qf value increased with increasing packing fraction. The τf increased with increasing dielectric constant. The typical values of ZnZrNb2O8 were ε = 30, Qf = 61 000 GHz, τf=−52 × 10−6 °C−1, sintered at 950°C.
A new temperature stable, low‐loss, low sintering temperature microwave dielectric material Mg0.5Zn0.5TiNb2O8 was investigated for the first time. Single phase Mg0.5Zn0.5TiNb2O8 was obtained, and it showed Columbite structure which was tri‐ixiolite structure. The variation trend of dielectric constant was in accordance with variation trend of relative density. When the sintering temperature was lower than 1120°C, the Qf value increased with the increasing of relative density. When the sintering temperature was higher than 1120°C, the Qf value decreased with the increasing of the unit cell volume. With the decrease of bond strength, the τf increased. The typical values of ε = 30.74, Qf = 66 900 GHz, τf = −4.01 × 10−6/°C were obtained for Mg0.5Zn0.5TiNb2O8 sintered at 1120°C for 6 h.
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