High-resistivity β -Ga 2 O 3 thin films were grown on Si-doped n-type conductive β -Ga 2 O 3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 × 10 6 Ω. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 × 10 18 cm −3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 × 10 2 % were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β -Ga 2 O 3 thin films and the n-type conductive β -Ga 2 O 3 single-crystal substrate.
Solution deposition is a promising method for YBCO coated conductor fabrication. We developed a new fluorine-reduced 'metal-organic deposition using trifluoroacetates' (TFA-MOD) method with copper acetate as one of the starting materials. Using the fluorine-reduced TFA-MOD method, we were able to get high performance YBCO films with good out-of-plane and in-plane orientations within a shortened calcining time, which was reduced by at least 4 h in comparison with that for the normal TFA-MOD process. Good superconducting properties, with J c of 2 MA cm −2 at 77 K and T c of 88.3 K ( T c = 0.9 K), have been obtained for 350 nm epitaxial YBCO thin films on LaAlO 3 single-crystal substrates. Owing to the low price of copper acetate and the shorter calcining time, fluorine-reduced TFA-MOD is a very effective and cost-cutting process.
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