InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite or zincblende crystal phase and their photoluminescence (PL) properties were investigated at low temperature (≈6K) for different measurement geometries. PL emissions from the NWs were carefully studied in a wide energy range from 0.7 eV to 1.6 eV. The different features observed in the PL spectra for increasing energies are attributed to four distinct emitting domains of these nano-heterostructures: the InAs island (axially grown), the thin InAs capping shell (radially grown), the crystal-phase quantum disks arising from the coexistence of InP zincblende and wurtzite segments in the same NW, and the InP portions of the NW. These results provide a useful frame for the rational implementation of InP-InAs-InP multishell NWs containing various quantum confined domains as polychromatic optically active components in nanodevices for quantum information and communication technologies.

A series of samples with different Si concentration were prepared by adjusting the numbers of Si-doped graphite targets and pure graphite targets. It was found that the stress in the thin films decreased from 4.5GPa to 3.1GPa when the Si concentration reached 6.7at.%，but the hardness kept constant at about 3600Hv，almost the same as of un-doped thin films，and the friction coefficient of thin films kept constant at about 0.15. As the Si concentration in the thin film kept on increasing，the concentration of C-Si bond will increase，leading to the decrease of hardness and stress and the increase of friction coefficient.

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In order to study the laser etching mechanism for aluminum thin film on polyimide substrate, the etching process was simulated by the finite element analysis software ANSYS, and etching profile was predicted. A theoretical model was established by comparing the simulated etching results with calculated ones; it was presumed that the etching process was firstly a thermal dominant one, then a photochemical interaction dominant one, and finally a thermal one again.

Specimens of PbTe single film are deposited on Ge substrates by vacuum thermal evaporation. During the temperature range of 80-300 K, the transmittance of a PbTe film within 2-15 μm is measured every 20 K by the PerkinElmer Fourier transform infrared spectroscopy cryogenic testing system. Then, the relationship between the refractive index and wavelength within 7-12 μm at different temperatures is received by the full spectrum inversion method fitting. It can be seen that the relationship conforms to the Cauchy formula, which can be fitted. Then, the relationship between the refractive index of the PbTe film and the temperature/wavelength can be expressed as nðλ; T Þ ¼ 5.82840 − 0.00304T þ 4.61458 × 10 −6 T 2 þ 8.00280∕λ 2 þ 0.21544∕λ 4 , which is obtained by the fitting method based on the Cauchy formula. Finally, the designed value obtained by the formula and the measured spectrum are compared to verify the accuracy of the formula.