Microwave dielectric properties of BaTi5O11ceramics prepared by solid-state method with various calcining temperatures and sintering temperatures have been discussed. The εrvalue of 42.8, the Q×f value of 44,000 GHz, and the τfvalue of 42.4 ppm/oC were obtained for BaTi5O11ceramics sintering at 1100oC for 4 h. BaTi5O11is proposed as a suitable material candidate for application in high selective microwave ceramic passive components.
Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 2.5×1020cm-3, a resistivity of 2.8×10-3Ω-cm, and a mobility of 12 cm2/Vs.
Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.
Microwave dielectric properties and microstructures of (Ca0.8Sr0.2)ZrO3 ceramics prepared by the conventional solid-state route have been studied. The values of the dielectric constant (εr) were 22-26. The Q×f values of 10400–11500 GHz were obtained when the sintering temperatures were in the range of 1400–1490°C. The temperature coefficient of the resonant frequency τf was not sensitive to the sintering temperature. The εr value of 26, the Q×f value of 11500 GHz, and the τf value of-9 ppm/°C were obtained for (Ca0.8Sr0.2)ZrO3 ceramics sintering at 1490°C. The ceramic, (Ca0.8Sr0.2)ZrO3 is proposed as a suitable candidate material for application in highly selective microwave ceramic passive components.
The microstructure and electrical properties of ZnTe films were investigated by using thermal evaporation with emphasis on the effects of a deposition temperature. Microstructure, crystallinity, carrier concentration, resistivity, and mobility are shown to be dependent on the deposition temperature. The highest carrier concentration of 9.1×1014 cm-3, the lowest resistivity of 9.9 Ω-cm and the largest mobility of 667 cm2V-1S-1 are presented at a deposition temperature of 580oC, respectively. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes.
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