Currently, one-dimensional all-inorganic CsPbX (X = Br, Cl, and I) perovskites have attracted great attention, owning to their promising and exciting applications in optoelectronic devices. Herein, we reported the exploration of superior photodetectors (PDs) based on a single CsPbI nanorod. The as-constructed PDs had a totally excellent performance with a responsivity of 2.92 × 10 A·W and an ultrafast response time of 0.05 ms, respectively, which were both comparable to the best ones ever reported for all-inorganic perovskite PDs. Furthermore, the detectivity of the PDs approached up to 5.17 × 10 Jones, which was more than 5 times the best one ever reported. More importantly, the as-constructed PDs showed a high stability when maintained under ambient conditions.

We report the enhanced field emission of B-doped SiC nanowires with a low turn-on field and enhanced high-temperature stability.

Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

A novel Zr-MOF based smart adsorbent was fabricated for the simultaneous detection and removal of organophosphorus pesticides in wastewater.

Currently, all‐inorganic CsPbX3 (X = Br, I, and Cl) perovskites (IPs) are emerging as excellent candidate materials for exploring optoelectronic devices, due to their superior optical/electronic performances. However, their intrinsic poor stability greatly limits their practical applications. Here, a general strategy is reported for in situ growth of all‐inorganic perovskite nanocrystals (IPNCs) in polymer fibers with highly uniform size and spatial distribution, which is based on one‐step electrospinning of solutions containing IPs precursors and polymers. It is verified that the IPNCs of CsPbX3 can be uniformly encapsulated within the polymer fibers with finely tuned compositions, by rationally adjusting the ratios of PbX2 and CsX salts in the raw solutions. Consequently, the photoluminescence (PL) emissions of CsPbX3@polymer fibers can be readily tuned to cover the whole visible range. The obtained CsPbBr3@polymer fibers exhibit fundamentally improved water/thermal stabilities with a PL quantum yield (QY) of 48%. Their PL QY retains beyond 70% of its original value after being immersed in water for 192 h and maintains over 50% after being heated at 80 °C for 120 min. Furthermore, the light emitting diodes with high brightness based on CsPbBr3@polymer fibers are constructed, suggesting their promising applications.