In order to study the vibration problem of liquid-solid coupling of rectangular liquid-storage structure with horizontal elastic baffle, ignoring the influence of surface gravity wave, two different velocity potential functions corresponding to the liquid above and below the elastic baffle are assumed; based on the theory of mathematical equation and energy method, the formulas of basic frequency of liquid-solid coupling vibration system are derived, the baffle joined to the tank wall with 3 kinds of boundary conditions, namely, four edges simply supported, two opposite edges clamped and two opposite edges simply supported, and four edges clamped; the influence rules of baffle length-width ratio, the ratio of baffle height to liquid level, baffle elastic modulus, baffle density, baffle thickness, and liquid density on the coupling vibration performance are studied. The results show that the frequency of the clamped boundary is minimum; the influences of baffle length-width ratio and relative height on the basic frequency are much greater than that of the other system parameters; the relation between baffle length-width ratio and the frequency is exponential, while baffle relative height has a parabola relation with the frequency; the larger the baffle length-width ratio, the closer the baffle to the liquid level; the coupling frequency will be reduced more obviously.
Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2011 C Optical and electrical properties of composites formed by mixing porous silicon (PS) and poly (9, 9-diocty-2, 7-fluoreneco-4, 4'-butoxydiphenyl) (PFP) have been studied by Fourier transform-infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The optical spectra show that porous silicon is incorporated into the polymer without significant change in the polymer properties. The FT-IR spectroscopy has detected the existence of specific interactions, which may be attributed to non-conjugated alkoxy segment. By fitting the current-voltage (I-V) curve of PFP/PS structure with the modified standard equation, the n factor and I 0 are determined.In recent years, extensive researches have been carried out in the area of introducing organic or inorganic materials into the porous silicon [1][2][3][4][5][6] , forming hybrid composite materials in this way. Hybrid composites may have the advantages of both systems such as wide band gap and enhanced light emitting properties from the organic materials. Many studies have shown that porous silicon is an attractive template because it was considered to have huge potential to integrate the wellestablished silicon technology to optoelectronic systems [7][8][9] . Organic materials, such as conducting polymers, often have been grafted onto porous silicon by dip or spin coating method [2] . Inorganic materials, such as zinc oxide, often have been deposited by radio frequency (RF) co-sputtering or chemical vapor deposition (CVD) [3] . The appropriate method should be chosen to fabricate hybrid composites.The polymer chosen in this work is poly (9, 9-dioctyl-2, 7-fluorene-co-4, 4'-butoxydiphenyl) (PFP), which possesses many excellent properties such as wide optical bandwidth and ultraviolet-blue emission and can be used as a host of energy transfer which may be applied in light-emitting diodes (PLEDs). The PFP derivatives with non-conjugated alkoxy segment (-O-CH 2 -CH 2 -CH 2 -CH 2 -O-) in backbone were synthesized by Suzuki coupling reaction in our research group [10] . The calorific, optical and electrochemistry characteristics have been studied. The PFP possesses high thermal stability and luminescence efficiency (18.0%), and emits blue fluorescence. But until now, the electronic characteristics of PFP have not been surveyed. The aim of this work is depositing PFP onto the porous silicon surface using spin-coating method. The photoelectric properties of this heterojunction diode are investigated. The investigations are focused on spectral studies (PL, FT-IR), SEM images and the current-voltage characteristics. Good rectifying properties are observed.Porous silicon samples are prepared using N-type silicon wafer with a resistivity of 0.02 •cm and the (100) crystal orientation. To ensure good ohmic back contact, the aluminum is evaporated on the back side of the silicon wafer. The resulting silicon wafer is done under a constant density of 30 mA/cm 2 at 40...
A new derivation of Transient Grounding Resistance (TGR) has been proposed in this paper. Take grounding system as naked antenna in lossy medium, and then get the input resistance of naked antenna in a given frequency based on Helen current integral equations. With inverse Fourier transform, the resistance calculation equations can be translated from frequency domain to time domain. The result can be applied to design a new grounding system and to calculate its TGR .
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