This article deals with the analysis of the relationship between the pull-off force measured by atomic force microscopy and the dimensions of water bridge condensed between a hydrophilic silicon oxide tip and a silicon oxide surface under ambient conditions. Our experiments have shown that the pull-off force increases linearly with the radius of the tip and nonmonotonically with the relative humidity (RH). The latter dependence generally consists of an initial constant part changing to a convex-concave-like increase of the pull-off force and finally followed by a concave-like decrease of this force. The reproducibility tests have demonstrated that the precision limits have to be taken into account for comparing these measurements carried out under atmospheric conditions. The results were fitted by a classical thermodynamic model based on water-bridge envelope calculations using the numerical solution of the Kelvin equation in the form of axisymmetric differential equations and consequent calculation of adhesive forces. To describe the measured data more precisely, a decrease of the water surface tension for low RH was incorporated into the calculation. Such a decrease can be expected as a consequence of the high surface curvature in the nanometer-sized water bridge between the tip and the surface.

We present a comparative study of plasmonic antennas fabricated by electron beam lithography and direct focused ion beam milling. We have investigated optical and structural properties and chemical composition of gold disc-shaped plasmonic antennas on a silicon nitride membrane fabricated by both methods to identify their advantages and disadvantages. Plasmonic antennas were characterized using transmission electron microscopy including electron energy loss spectroscopy and energy dispersive X-ray spectroscopy, and atomic force microscopy. We have found stronger plasmonic response with better field confinement in the antennas fabricated by electron beam lithography, which is attributed to their better structural quality, homogeneous thickness, and only moderate contamination mostly of organic nature. Plasmonic antennas fabricated by focused ion beam lithography feature weaker plasmonic response, lower structural quality with pronounced thickness fluctuations, and strong contamination, both organic and inorganic, including implanted ions from the focused beam. While both techniques are suitable for the fabrication of plasmonic antennas, electron beam lithography shall be prioritized over focused ion beam lithography due to better quality and performance of its products.

In this work we present the effect of low dose gallium (Ga) deposition (<4 ML) performed in UHV (10 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO 2 ) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.