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was prepared using thin layer technology. The sensor can be used for hydrogen detection at room temperature. Therefore, the power consumption is reduced by a factor 10 6 compared to the best low power consumption hydrogen sensors. In contrast to other sensors it can be used for measurements at very low and high hydrogen partial pressure. The limit of detection was determined to be 0.5 ppm. Measurements at high concentrations near to and above the Lower Explosion Level (LEL) of 4 % hydrogen in air are demonstrated. A method to achieve long lifetime of the sensor was developed.

The possibility of high measurements up to 350°C with semiconductor sensor for fluorine was silicon carbide as the substrate. temperature a chemical proven using A structure SiC/SiOz/LaF3/Pt leads to results comparable to the silicon based sensor. The influence of the temperature on the sensor behaviour is smaller than expected but the increased desorption rate improves the limit of detection. An impulse method using the initial slope of the response curve was shown to be advantageous.