No abstract

Two-dimensional (2D) materials, particularly black phosphorus (bP), have demonstrated themselves to be excellent candidates for high-performance infrared photodetectors and transistors. However, high-quality bP can be obtained only via mechanical exfoliation from high-temperature- and high-pressure-grown bulk crystals and degrades rapidly when exposed to ambient conditions. Here, we report solution-synthesized and air-stable quasi-2D tellurium (Te) nanoflakes for short-wave infrared (SWIR) photodetectors. We perform comprehensive optical characterization via polarization-resolved transmission and reflection measurements and report the absorbance and complex refractive index of Te crystals. It is found that this material is an indirect semiconductor with a band gap of 0.31 eV. From temperature-dependent electrical measurements, we confirm this band-gap value and find that 12 nm thick Te nanoflakes show high hole mobilities of 450 and 1430 cm V s at 300 and 77 K, respectively. Finally, we demonstrate that despite its indirect band gap, Te can be utilized for high-performance SWIR photodetectors by employing optical cavity substrates consisting of Au/AlO to dramatically increase the absorption in the semiconductor. By changing the thickness of the AlO cavity, the peak responsivity of Te photoconductors can be tuned from 1.4 μm (13 A/W) to 2.4 μm (8 A/W) with a cutoff wavelength of 3.4 μm, fully capturing the SWIR band. An optimized room-temperature specific detectivity ( D*) of 2 × 10 cm Hz W is obtained at a wavelength of 1.7 μm.

Nanophotonic devices enabled by aluminum plasmonics are saliently advantageous in terms of their low cost, outstanding sustainability, and affordable volume production. We report, for the first time, aluminum plasmonics based highly transmissive polarization-independent subtractive color filters, which are fabricated just with single step electron-beam lithography. The filters feature selective suppression in the transmission spectra, which is realized by combining the propagating and nonpropagating surface plasmons mediated by an array of opaque and physically thin aluminum nanopatches. A broad palette of bright, high-contrast subtractive colors is successfully demonstrated by simply varying the pitches of the nanopatches. These subtractive color filters have twice the photon throughput of additive counterparts, ultimately providing elevated optical transmission and thus stronger color signals. Moreover, the filters are demonstrated to conspicuously feature a dual-mode operation, both transmissive and reflective, in conjunction with a capability to exhibit micron-scale colors in arbitrary shapes. They are anticipated to be diversely applied to digital display, digital imaging, color printing, and sensing.

It is advantageous to construct a dielectric metasurface in silicon due to its compatibility with cost-effective, mature processes for complementary metal-oxide-semiconductor devices. However, high-quality crystalline-silicon films are difficult to grow on foreign substrates. In this work, we propose and realize highly efficient structural color filters based on a dielectric metasurface exploiting hydrogenated amorphous silicon (a-Si:H), known to be lossy in the visible regime. The metasurface is comprised of an array of a-Si:H nanodisks embedded in a polymer, providing a homogeneously planarized surface that is crucial for practical applications. The a-Si:H nanodisk element is deemed to individually support an electric dipole (ED) and magnetic dipole (MD) resonance via Mie scattering, thereby leading to wavelength-dependent filtering characteristics. The ED and MD can be precisely identified by observing the resonant field profiles with the assistance of finite-difference time-domain simulations. The completed color filters provide a high transmission of around 90% in the off-resonance band longer than their resonant wavelengths, exhibiting vivid subtractive colors. A wide range of colors can be facilitated by tuning the resonance by adjusting the structural parameters like the period and diameter of the a-Si:H nanodisk. The proposed devices will be actively utilized to implement color displays, imaging devices, and photorealistic color printing.