The role of chloride in the MAPbI3-xClx perovskite is still limitedly understood, albeit subjected of much debate. Here, we present a combined angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and first-principles DFT modeling to investigate the MAPbI3-xClx/TiO2 interface. AR-XPS analyses carried out on ad hoc designed bilayers of MAPbI3-xClx perovskite deposited onto a flat TiO2 substrate reveal that the chloride is preferentially located in close proximity to the perovskite/TiO2 interface. DFT calculations indicate the preferential location of chloride at the TiO2 interface compared to the bulk perovskite due to an increased chloride-TiO2 surface affinity. Furthermore, our calculations clearly demonstrate an interfacial chloride-induced band bending, creating a directional "electron funnel" that may improve the charge collection efficiency of the device and possibly affecting also recombination pathways. Our findings represent a step forward to the rationalization of the peculiar properties of mixed halide perovskite, allowing one to further address material and device design issues.
Towards the evaluation of defects in MoS 2 using cryogenic photoluminescence spectroscopyWe reveal the power of cryogenic photoluminescence (PL) for exploring defects in transition metal dichalcogenides (TMDs) via characteristic relaxation mechanisms of the excitons involved. We demonstrate that the transfer process has enormous impact on amount, localization and type of defects within a single fl ake giving rise to signifi cant variation of electronic and optical properties of the TMD monolayers.Our study thus provides a new insight into the defect-driven phenomena in TMDs, with prospect for research of TMD-based heterostructures and superlattices.Characterization of the type and density of defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) is important as the nature of these defects strongly influences the electronic and optical properties of the material, especially its photoluminescence (PL). Defect characterization is not as straightforward as it is for graphene films, where the D and D' Raman scattering modes easily indicate the density and type of defects in the graphene layer. Thus, in addition to the Raman scattering analysis, other spectroscopic techniques are necessary to perform detailed characterization of atomically thin TMD layers. We demonstrate that PL spectroscopy performed at liquid helium temperatures reveals the key fingerprints of defects in TMDs and hence provides valuable information about their origin and concentration.In our study, we address defects in chemical vapor deposition (CVD)-grown MoS 2 monolayers. A significant difference is observed between the as-grown monolayers compared with the CVD-grown monolayers transferred onto a Si/SiO 2 substrate, which contain extra defects due to the transfer process. We demonstrate that the temperature-dependent Raman and PL micro-spectroscopy techniques enable disentangling the contributions and locations of various defect types in TMD systems. † Electronic supplementary information (ESI) available: Additional details on the Raman and PL spectroscopies, decomposition of the Raman and PL spectra, and maps of the Raman and PL spectral parameters at different temperatures for the as-grown and transferred CVD MoS 2 . See
We exploit TiO2 surface functionalization to study the influence of the perovskite film crystalline orientational order on the photovoltaic performances.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.