The optomechanical coupling between a resonant optical field and a nanoparticle through trapping forces is demonstrated. Resonant optical trapping, when achieved in a hollow photonic crystal cavity is accompanied by cavity backaction effects that result from two mechanisms. First, the effect of the particle on the resonant field is measured as a shift in the cavity eigenfrequency. Second, the effect of the resonant field on the particle is shown as a wavelength-dependent trapping strength. The existence of two distinct trapping regimes, intrinsically particle specific, is also revealed. Long optical trapping (>10 min) of 500 nm dielectric particles is achieved with very low intracavity powers (<120 μW).
We analyze and compare the effect of fabrication disorder on the quality factor of six well-known high-index photonic crystal cavity designs. The theoretical quality factors for the different nominal structures span more than three orders of magnitude, ranging from 5.4 × 10(4) to 7.5 × 10(7), and the defect responsible for confining light is introduced in a different way for each structure. Nevertheless, among the different designs we observe similar behavior of the statistics of the disorder-induced light losses. In particular, we show that for high enough disorder, such that the quality factor is mainly determined by the disorder-induced losses, the measured quality factors differ marginally - not only on average as commonly acknowledged, but also in their full statistical distributions. This notably shows that optimizing the theoretical quality factor brings little practical improvement if its value is already much larger than what is typically measured, and if this is the case, there is no way to choose an alternative design more robust to disorder.
We fabricate and experimentally characterize an H0 photonic crystal slab nanocavity with a design optimized for maximal quality factor, Q = 1.7 × 106. The cavity, fabricated from a silicon slab, has a resonant mode at λ = 1.59 μm and a measured Q-factor of 400 000. It displays nonlinear effects, including high-contrast optical bistability, at a threshold power among the lowest ever reported for a silicon device. With a theoretical modal volume as small as V = 0.34(λ/n)3, this cavity ranks among those with the highest Q/V ratios ever demonstrated, while having a small footprint suited for integration in photonic circuits.
We report on GaN self-supported photonic structures consisting in freestanding waveguides coupled to photonic crystal waveguides and cavities operating in the near-infrared. GaN layers were grown on Si (111) by metal organic vapor phase epitaxy. E-beam lithography and dry etching techniques were employed to pattern the GaN layer and undercut the substrate. The combination of low-absorption in the infrared range and improved etching profiles results in cavities with quality factors as high as ∼5400. The compatibility with standard Si technology should enable the development of low cost photonic devices for optical communications combining wide-bandgap III-nitride semiconductors and silicon.
We demonstrate a resonant optical trapping mechanism based on two-dimensional hollow photonic crystal cavities. This approach benefits simultaneously from the resonant nature and unprecedented field overlap with the trapped specimen. The photonic crystal structures are implemented in a 30 mm 6 12 mm optofluidic chip consisting of a patterned silicon substrate and an ultrathin microfluidic membrane for particle injection and control. Firstly, we demonstrate permanent trapping of single 250 and 500 nm-sized particles with sub-mW powers. Secondly, the particle induces a large resonance shift of the cavity mode amounting up to several linewidths. This shift is exploited to detect the presence of a particle within the trap and to retrieve information on the trapped particle. The individual addressability of multiple cavities on a single photonic crystal device is also demonstrated.
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