Here,
we demonstrate that single InAs nanowire (NW)-based field-effect
transistor exhibits wavelength-selective switching between positive
and negative photoresponses caused by abundant defect states on the
NW surface. On this basis, by modifying the NW carrier transport behavior
through the strong local electric field formed by polarized ferroelectric
polymer P(VDF-TrFE), a rewritable NW memory device can be achieved
with electrical bistability and low-power consumption when writing
with different wavelength light pulses without any gate voltage. Our
study clearly reveals the significant role of the NW surface states
in not only photodetecting devices but also promising novel nonvolatile
light-assisted memory devices for numerous future applications.
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