In this contribution, spectral photoluminescence (SPL) imaging detecting both the spectral distribution and the lateral position is applied on recombination active defects in multicrystalline silicon solar cells and wafers. The result is analysed by a Multivariate Curve Resolution (MCR) algorithm using the spectral photoluminescence response and their positions. (i) Without any pre-assumptions made, the algorithm distinguishes four different recombination active defect types. Looking at the spatial distribution, it is shown that two of these defect types coincide with two defect types that have been distinguished on solar cell level using an analysis of forward and reverse biased electroluminescence (denoted as Type-A and -B) previously. (ii) Using SPL, all previously classified defects can also be distinguished at the wafer level. Therefore, the defects limiting the solar cell efficiency are already present in the wafer material and not introduced by the solar cell process. This is of particular interest for the question of how to predict the solar cell efficiency based on the PL measurements at the wafer level. The SPL is able to distinguish between the recombination activity of the dominant Type-A and -B defects that cannot be distinguished by classical PL measurements of the band-to-band recombination at the wafer level. The technique also highlights the changes in recombination activity of the given defects throughout the fabrication process. (iii) Additionally, it is shown that the spectral peak positions of Type-A defects coincide with the known D3 and D4 lines and of Type-B defects with the D1 line on both solar cell and wafer level. Two further defects are captured by the MCR algorithm denoted as Type-VID3 and Type-D07 defects occurring as spot-like defects in isolated positions. Their spectral PL response is analysed as well
In monocrystalline silicon rich in oxygen, thermal donors are formed at temperatures around 450 °C. These are widely accepted to be electrically active oxygen clusters acting as double donors to the conduction band. Exposure to higher temperatures (650 °C) reportedly eliminates them. Herein, a systematic study of the spatial distribution of thermal donor formation and elimination by heat treatment at 450 and 650 °C in commercial n‐type Czochralski‐silicon wafers with high and low content of interstitial oxygen atoms are reported. Hyperspectral imaging techniques with spectral and spatial resolution are used. Thermal donors form at 450 °C in a ring‐like pattern, significantly enhanced in oxygen‐rich material. The results indicate the formation of at least six different donor clusters, leading to a strong, characteristic spectral response upon photoexcitation. The emission related to direct band‐to‐band recombination (1.100 eV) become systematically stronger upon heat treatment at 450 °C. Subsequent treatment at 650 °C rearrange the spectral response into a single, homogenously distributed, broadband emission with peak energy of 0.767 eV. The emission related to band‐to‐band recombination is significantly reduced. A previously studied emission at 0.807 eV (D1) commonly related to impurities is found, providing evidence that this signal is related to the combination of defects and oxygen.
We report on studies of sub‐bandgap defect related photoluminescence (DRL) signals originating from radiative recombination through traps in the bandgap of cooled mono‐like silicon wafers. Spectrally resolved photoluminescence (SPL) and multivariate curve resolution (MCR) have been used in combination, to study the behaviour of sub‐bandgap photoluminescence (PL) emissions in wafers cut from different heights in a pilot‐scale mono‐like silicon ingot. No DRL signals were found in the main mono‐like body. Strong defect related sub‐bandgap emissions correlating with heavily dislocated areas, are found directly above some of the seed junctions. The DRL signal exhibits a correlation with the number of axis with small angle misalignment in the junctions of the seeds. The signal conventionally labelled D1 (0.80 eV) decreases with ingot height. A mechanism relating this signal to oxygen is proposed. The signals D3 (0.94 eV) and D4 (1.00 eV) are found to co‐occur, supporting previous studies, and similarly to the D2 (0.87 eV) signal, their strength is found to increase with ingot height. As the content of the transition metal impurities in the ingot is supposed to increase with height, this supports a reported link between the D3 and D4 signals with Fe, as well as a link between D2 and other impurities. An emission previously found in multicrystalline material and labelled D07 (0.70 eV), is found to solely exist as the only DRL signal recorded by us in parasitic crystals, growing into the main mono‐like ingot from the crucible walls. This contradicts the common notion that the D1–D4 signals are strongly related to, and always follow dislocations. Total photoluminescence spectrum (right) and distribution (left) of the PL signal with centre energy 0.70 eV emanating from the parasitic crystals growing into the bulk mono‐like Si crystal from the crucible walls.
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