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We investigated low-hydrogen SiN films prepared by a low temperature (350 degrees C) PECVD method. The impact of SiH(4)/N(2) flow ratio and radio frequency power on the hydrogen content in the SiN films was studied. In this work, we demonstrated a low-loss sub-micron SiN waveguide by using the corresponding optimal SiN films. The propagation loss was found to be as low as -2.1+/-0.2 dB/cm at 1550 nm with waveguide cross-section of 700 nm x 400 nm. The results suggest that the SiN films grown by PECVD with low hydrogen can be used in photonics integrated circuits for new generation communications applications.

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Lithium niobate (LN) devices have been widely used in optical communication and nonlinear optics due to its attractive optical properties. The emergence of thin-film lithium niobate on insulator (LNOI) improves performances of LN-based devices greatly. However, a high-efficient fiber-chip optical coupler is still necessary for the LNOI-based devices for practical applications. In this paper, we demonstrate a highly efficient and polarizationindependent edge coupler based on LNOI. The coupler, fabricated by standard semiconductor process, shows a low fiber-chip coupling loss of 0.54 dB/0.59 dB per facet at 1550 nm for TE/TM light respectively, when coupled with ultra-high numerical aperture fiber (UHNAF) of which mode field diameter is about 3.2 μm. The coupling loss is lower than 1dB/facet for both TE and TM light at wavelengths longer than 1527nm. A relatively large tolerance for optical misalignment is also proved. The coupler shows a promising stability in high optical power and temperature variation.