A KrF pulsed excimer laser (248 nm) was utilized to crystallize sputtered La-modified Pb(Zr,Ti)O 3 (3:30:70) (PLZT) films on LaNiO 3 -coated silicon substrates. The film surface was irradiated with defocused laser pulses in an oxygen ambient at various substrate temperatures. Polycrystalline, phase pure perovskite PLZT thin films were produced for substrate temperatures of 2501C and higher. The dielectric constant and loss tangent values of laser-assisted crystallized (10 min exposure at 10 Hz using a substrate temperature of 4001C) PLZT thin films at 10 kHz were 406 and 0.027; in comparison, rapid thermal annealed films (annealed at 7001C for 1 min) showed values of 400 and 0.021, respectively. Laser crystallized films exhibited a remanent polarization value of 14 lC/cm 2 with a coercive field |(E 1c 1E Àc )|/2 of 95 kV/cm.
The microstructure and interface quality of chemical solution‐deposited BaTiO3 films on Ni foil were investigated by transmission electron microscopy. The microstructures were found to consist of equiaxed and uniform grains, with average grain sizes for rapid thermal‐annealed films of 12 nm (700°C) and 18 nm (750°C), respectively. Films furnace annealed at 1000°C after a rapid thermal anneal at 700°C showed a grain size of 42 nm. It is believed that the final grain size is limited by the highly reducing atmosphere and also by the existence of well‐developed crystallites resulting from the rapid thermal annealing step. Spatially resolved electron energy loss spectroscopy identified the existence of residual carbon and variations in the oxygen content in BaTiO3 films. High‐resolution transmission electron microscopy revealed an interfacial layer of Ni–Ba alloy (5–10 nm thick) between the BaTiO3 and Ni foil.
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