A 20‐inch, largest OLED display in the world is demonstrated which is driven by “Super Amorphous Silicon” technology. It has been widely believed that the characteristics of amorphous silicon TFT is not sufficient to drive OLED display. This paper turns over the hypothesis to prove that amorphous silicon can be applied to the large active‐matrix driven displays. Novel approaches to enable amorphous silicon to drive bright and long life OLED display are shown to open a bright future to realize larger OLED televisions.
An amorphous silicon thin film transistor (TFT) and a TFT with a microcrystalline/amorphous channel layer are studied for organic light emitting diode (OLED) backplane usage. The amorphous silicon TFT V TH shift can be reduced with saturation region operation. There are two mechanisms that cause the V TH shift in a saturation region: One that appears with continuous current flow and the other that appears with the transient charge injection into a gate insulator. SiH 4 flow in hydrogen plasma with a pumping flow period shorter than the gas residence time produces a high-transconductance microcrystalline/ amorphous silicon TFT.
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