Quantum dots (QDs) are acclaimed low-dimensional nanosystems, where we find complete spatial arrest of the motion of the carriers (electrons and holes). Their extremely small dimension helps them display quantum manifestations through various size-dependent physical properties. These properties can be tuned externally thereby making QDs immensely valuable components of technologically advanced devices. As a result, we frequently find research works that analyze various aspects of the low-dimensional nanosystems, [1][2][3][4][5][6][7][8] particularly emphasizing their nonlinear optical (NLO) responses. The effective confinement potential (ECP) of QD principally controls its energy spectrum and the eigenstates. Thus, modulation of ECP can be useful to tailor its properties and consequent applications in fabricating advanced quantum devices. Doping of impurity to QD influences its ECP, which, in turn, profoundly modulates its physical properties. Consequently, studies delving into the impurity effects in QD and other low-dimensional nanosystems are found to be quite abundant.

This work scrutinizes the time-average excitation rate (TAER) among the GaAs quantum dot (QD) eigenstates under the aegis of Gaussian white noise (GWN) and the parity of the anharmonic potential (odd/even). GWN connects with the system by additive or multiplicative mode. The said excitation of the ground state population has been triggered by an external field which may be a polychromatic radiation field (PRF), or pulsed field (PF) or chirped pulsed field (CPF). The study reveals the subtle nuances of the interplay between noise (additive or multiplicative), anharmonicity (odd or even) and the external field (PRF, PF or CPF) that finally govern the attributes of the TAER diagrams. The TAER profiles exhibit persistent growth, persistent decline, maximization (important in view of production of prominent nonlinear optical properties), minimization and saturation (relevant to the dynamic freezing). The findings appear useful for regulating the TAER among the GaAs QD eigenstates which have substantial technological relevance.

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