Calcium aluminosilicate, CaAl 2 Si 2 O 8 , is a promising ceramic material that has found applications in several areas, such as glass production and petrology. Atomistic scale simulation techniques are used to study the intrinsic defects, Ca-ion migration paths and doping behavior in CaAl 2 Si 2 O 8 . The most favorable defect is the Al-Si anti-site in agreement with the experimental observation. The O-Frenkel is the second most favorable defect. The Ca-Frenkel is higher in energy only by 0.62 eV than the O-Frenkel. Long-range Ca-ion migration is observed in the ac plane with the activation energy of 2.84 eV suggesting that Ca-ion diffusion in this material is slow. The prominent isovalent dopant on the Ca site is the Sr, which was experimentally substituted on the Ca site to prevent phase transformation. The formation of Ca interstitials and oxygen vacancies is favored by Fe 3+ doping on the Si site. The favorable tetravalent dopant on the Si site and the Al site to form Ca vacancies is the Ge.
Naturally occurring lithium-rich α-spodumene (α-LiAlSi2O6) is a technologically important mineral that has attracted considerable attention in ceramics, polymer industries, and rechargeable lithium ion batteries (LIBs). The defect chemistry and dopant properties of this material are studied using a well-established atomistic simulation technique based on classical pair-potentials. The most favorable intrinsic defect process is the Al-Si anti-site defect cluster (1.08 eV/defect). The second most favorable defect process is the Li-Al anti-site defect cluster (1.17 eV/defect). The Li-Frenkel is higher in energy by 0.33 eV than the Al-Si anti-site defect cluster. This process would ensure the formation of Li vacancies required for the Li diffusion via the vacancy-assisted mechanism. The Li-ion diffusion in this material is slow, with an activation energy of 2.62 eV. The most promising isovalent dopants on the Li, Al, and Si sites are found to be Na, Ga, and Ge, respectively. The formation of both Li interstitials and oxygen vacancies can be facilitated by doping of Ga on the Si site. The incorporation of lithium is studied using density functional theory simulations and the electronic structures of resultant complexes are discussed.
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