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Articles you may be interested inMemory bistable mechanisms of organic memory devices Appl. Phys. Lett. 97, 043301 (2010); 10.1063/1.3467050 Study of process contributions to total overlay error budget for sub-60 -nm memory devices Impact of registration error of reticle on total overlay error budget A feasibility study of mutual information based setup error estimation for radiotherapy Med.According to the 2007 international technology roadmap for semiconductors, the overlay budget of 60 nm memory devices is 11.3 nm. To meet such a tight requirement, each overlay error budget should be controlled carefully. It turns out that scanner contributions due to machine to machine overlay ͑MMO͒ error are nearly half of the total overlay error budget. In a conventional way, overlay errors are corrected by ten linear terms: offset x and y, wafer rotation x and y, wafer magnification x and y, shot rotation x and y, and shot magnification x and y. Especially for the shot correction, average correction values are applied commonly for all shots. MMO cannot be compensated by only linear correction to meet such a tight specification any longer. In this article, a grid matching strategy through per-shot-correction ͑PSC͒ is investigated so that scanner contributions are minimized. In PSC, shot correction is implemented for each shot with different correction parameter values. By matching wafer grids from machine to machine, overlay budget is feasible for sub-60-nm memory devices.

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A series of new cycloaliphatic olefm monomers protected by alicyclic hydrocarbon groups were synthesized. New cycloolefm-malefic anhydride (COMA) polymers were also designed and prepared using the new monomers for 193 nm resist applications. These polymer were synthesized by free radical polymerization method, utilizing azobisisobutyronitrile (AIBN). The new COMA polymer had good transparency at 193 nm and had an etch rate in CF4 mixture plasma of approximate 1.0 times that of KrF resists. Using ArF exposure tools (NA=0.6, 6=0.7), 130 nm L/S patterns were resolved. When exposed with off-axis illumination, 100 nm L/S patterns were resolved.