Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

We describe the synthesis, materials characterization and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na4Si4) and silicon tetrachloride (SiCl4) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ~10 nm with long size-adjusted 29Si spin lattice relaxation (T1) times (> 600 s), which are retained after hyperpolarization by low temperature DNP.

Creating allotropes and polymorphs of nanoparticles (NPs) has gained tremendous momentum in recent times. Group 14 (C, Si, Ge) has a number of allotropes; some with significant applications. Here we report the synthesis of Si NPs crystallizing in the BC8 structure via a colloidal route for the first time. The BC8 structure is a metastable structure of Si that can be accessed from the β-Sn form through the release of high pressure. These Si BC8 structured NPs were synthesized via reduction of SiI4 with n-butyllithium, capped with octanol and precipitated from solution. The transmission electron microscopy lattice fringes as well as the selected area electron diffraction pattern of the precipitate are consistent with the BC8 structure. The LeBail whole profile fitting of powder X-ray diffraction data also confirms the structure as the BC8 phase. The Raman spectrum provides further evidence to support the BC8 structure. With proper tuning of the band gap these NPs could be potential candidates for solar cells.

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The synthesis and characterization of Bi2Te3 and Bi2–x Sb x Te3 aerogel materials, and the effect of gelation on thermoelectrically relevant properties, is reported. Aerogels are prepared from oxidation of discrete thiolate-capped nanoparticles to yield a wet gel, followed by supercritical CO2 drying. The resultant aerogels have surface areas between 36 and 45 m2/g. Characterization of the thermoelectric properties of hot-pressed pellets of Bi2Te3 aerogels suggested a decrease in lattice thermal conductivity with respect to the bulk materials, attributed to the effect of nanostructuring, but the power factor (S 2σ) was also reduced due to the effect of adventitious doping. In the case of Bi2–x Sb x Te3 aerogels, there was no change in the lattice thermal conductivity upon nanostructuring, but again the power factor was reduced with respect to bulk materials. This is attributed to the presence of excess tellurium, which led to compensation of the majority charge carriers. Proper carrier concentration optimization of the chalcogenide aerogel materials is needed if these materials are to be exploited in thermoelectrics.