We report an efficiency of 6.1% for a solution-processed non-fullerene solar cell using a helical perylene diimide (PDI) dimer as the electron acceptor. Femtosecond transient absorption spectroscopy revealed both electron and hole transfer processes at the donor-acceptor interfaces, indicating that charge carriers are created from photogenerated excitons in both the electron donor and acceptor phases. Light-intensity-dependent current-voltage measurements suggested different recombination rates under short-circuit and open-circuit conditions.

Lithium–sulfur (Li–S) batteries are severely hindered by the low sulfur utilization and short cycling life, especially at high rates. One of the effective solutions to address these problems is to improve the sulfiphilicity of lithium polysulfides (LiPSs) and the lithiophilicity of the lithium anode. However, it is a great challenge to simultaneously optimize both aspects. Herein, by incorporating the merits of strong absorbability and high conductivity of SnS with good catalytic capability of ZnS, a ZnS-SnS heterojunction coated with a polydopamine-derived N-doped carbon shell (denoted as ZnS-SnS@NC) with uniform cubic morphology was obtained and compared with the ZnS-SnS2@NC heterostructure and its single-component counterparts (SnS@NC and SnS2@NC). Theoretical calculations, ex situ XANES, and in situ Raman spectrum were utilized to elucidate rapid anchoring-diffusion-transformation of LiPSs, inhibition of the shuttling effect, and improvement of the sulfur electrochemistry of bimetal ZnS-SnS heterostructure at the molecular level. When applied as a modification layer coated on the separator, the ZnS-SnS@NC-based cell with optimized lithiophilicity and sulfiphilicity enables desirable sulfur electrochemistry, including high reversibility of 1149 mAh g–1 for 300 cycles at 0.2 C, high rate performance of 661 mAh g–1 at 10 C, and long cycle life with a low fading rate of 0.0126% each cycle after 2000 cycles at 4 C. Furthermore, a favorable areal capacity of 8.27 mAh cm–2 is maintained under high sulfur mass loading of 10.3 mg cm–2. This work furnishes a feasible scheme to the rational design of bimetal sulfides heterostructures and boosts the development of other electrochemical applications.

The tunnelling of electrons through molecules (and through any nanoscale insulating and dielectric material ) shows exponential attenuation with increasing length , a length dependence that is reflected in the ability of the electrons to carry an electrical current. It was recently demonstrated that coherent tunnelling through a molecular junction can also be suppressed by destructive quantum interference , a mechanism that is not length-dependent. For the carbon-based molecules studied previously, cancelling all transmission channels would involve the suppression of contributions to the current from both the π-orbital and σ-orbital systems. Previous reports of destructive interference have demonstrated a decrease in transmission only through the π-channel. Here we report a saturated silicon-based molecule with a functionalized bicyclo[2.2.2]octasilane moiety that exhibits destructive quantum interference in its σ-system. Although molecular silicon typically forms conducting wires , we use a combination of conductance measurements and ab initio calculations to show that destructive σ-interference, achieved here by locking the silicon-silicon bonds into eclipsed conformations within a bicyclic molecular framework, can yield extremely insulating molecules less than a nanometre in length. Our molecules also exhibit an unusually high thermopower (0.97 millivolts per kelvin), which is a further experimental signature of the suppression of all tunnelling paths by destructive interference: calculations indicate that the central bicyclo[2.2.2]octasilane unit is rendered less conductive than the empty space it occupies. The molecular design presented here provides a proof-of-concept for a quantum-interference-based approach to single-molecule insulators.

We describe the design and synthesis of a new graphene ribbon architecture that consists of perylenediimide (PDI) subunits fused together by ethylene bridges. We created a prototype series of oligomers consisting of the dimer, trimer, and tetramer. The steric congestion at the fusion point between the PDI units creates helical junctions, and longer oligomers form helical ribbons. Thin films of these oligomers form the active layer in n-type field effect transistors. UV-vis spectroscopy reveals the emergence of an intense long-wavelength transition in the tetramer. From DFT calculations, we find that the HOMO-2 to LUMO transition is isoenergetic with the HOMO to LUMO transition in the tetramer. We probe these transitions directly using femtosecond transient absorption spectroscopy. The HOMO-2 to LUMO transition electronically connects the PDI subunits with the ethylene bridges, and its energy depends on the length of the oligomer.

We have grown well-ordered graphene adlayers on the lattice-matched Co(0001) surface. Low-temperature scanning tunneling microscopy measurements demonstrate an on-top registry of the carbon atoms with respect to the Co(0001) surface. The tunneling conductance spectrum shows that the electronic structure is substantially altered from that of isolated graphene, implying a strong coupling between graphene and cobalt states. Calculations using density functional theory confirm that structures with on-top registry have the lowest energy and provide clear evidence for strong electronic coupling between the graphene pi-states and Co d-states at the interface.