Ultrathin bilayers (BLs) of bismuth have been predicated to be a two-dimensional (2D) topological insulator. Here we report on a new route to manufacture the high-quality Bi bilayers from a 3D topological insulator, a top-down approach to prepare large-area and well-ordered Bi(111) BL with deliberate hydrogen etching on epitaxial Bi2Se3 films. With scanning tunneling microscopy (STM) and X-ray photoelectron spectra (XPS) in situ, we confirm that the removal of Se from the top of a quintuple layer (QL) is the key factor, leading to a uniform formation of Bi(111) BL in the van der Waals gap between the first and second QL of Bi2Se3. The angle resolved photoemission spectroscopy (ARPES) in situ and complementary density functional theory (DFT) calculations show a giant Rashba splitting with a coupling constant of 4.5 eV Å in the Bi(111) BL on Bi2Se3. Moreover, the thickness of Bi BLs can be tuned by the amount of hydrogen exposure. Our ARPES and DFT study indicated that the Bi hole-like bands increase with increasing the Bi BL thickness. The selective hydrogen etching is a promising route to produce a uniform ultrathin 2D topological insulator (TI) that is useful for fundamental investigations and applications in spintronics and valleytronics.

We theoretically investigate the electronic properties of p-type δ-doped GaAs inserted into a quantum well under the electric field, at T = 0 K. We will investigate the influence of the electric field on the δ-doping concentration for a uniform distribution. The depth of confining potential, the density profile, the Fermi level, the subband energies and the subband populations calculate by solving the Schrödinger and Poisson equations self consistently. It is found that the changes of the electronic properties are quite sensitive to the applied electric field and the doping concentration. As different from single n-type δ-doped structure, we see a replace between the ground light-hole (lh1) subband and the first excited heavy-hole (hh2) subband whenever the external electric field reaches a critical value. We find the abrupt changing of the subband energies and the subband populations whenever the applied electric field reaches a certain value. Also, it is found that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers. *

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