Routing Bridges (RBridges) provide optimal pair-wise forwarding without configuration, safe forwarding even during periods of temporary loops, and support for multipathing of both unicast and multicast traffic. They achieve these goals using IS-IS routing and encapsulation of traffic with a header that includes a hop count.RBridges are compatible with previous IEEE 802.1 customer bridges as well as IPv4 and IPv6 routers and end nodes. They are as invisible to current IP routers as bridges are and, like routers, they terminate the bridge spanning tree protocol.The design supports VLANs and the optimization of the distribution of multi-destination frames based on VLAN ID and based on IP-derived multicast groups. It also allows unicast forwarding tables at transit RBridges to be sized according to the number of RBridges (rather than the number of end nodes), which allows their forwarding tables to be substantially smaller than in conventional customer bridges.

Status of this Memo This document specifies an Internet standards track protocol for the Internet community, and requests discussion and suggestions for improvements. Please refer to the current edition of the "Internet Official Protocol Standards" (STD 1) for the standardization state and status of this protocol. Distribution of this memo is unlimited.

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Memristor is a fundamental circuit element in addition to resistor, capacitor, and inductor. As it can remember its resistance state even encountering a power off, memristor has recently received widespread applications from non-volatile memory to neural networks. The current memristor family mainly comprises resistive memristor, polymeric memristor, ferroelectric memristor, manganite memristor, resonant-tunneling diode memristor, and spintronic memristor in terms of the materials the device is made of. In order to help researcher better understand the physical principles of the memristor, and thus to provide a promising prospect for memristor devices, this paper presents an overview of memristor materials properties, switching mechanisms, and potential applications. The performance comparison among different memristor members is also given.

Phase-change probe memory using Ge 2 Sb 2 Te 5 has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time and long retention time. In order to utmostly mimic the practical setup, and thus fully explore the potential of phase-change probe memory for 10 Tbit/in 2 target, some advanced modeling techniques that include threshold-switching, electrical contact resistance, thermal boundary resistance and crystal nucleation-growth, are introduced into the already-established electrothermal model to simulate the write and read performance of phasechange probe memory using an optimal media stack design. The resulting predictions clearly demonstrate the capability of phase-change probe memory to record 10 Tbit/in 2 density under pico Joule energy within micro second period.