E-Beam Lithography is still the driving technology for semiconductor manufacturing of critical levels at the 45nm node. Mask costs, yields and representation of the mask on wafer are important factors to consider. Mask-less E-beam lithography is being considered, but major manufacturing is still done by scanner technology. Therefore the same emphasis on modeling applied in the 1990's on the wafer is now being applied to mask technologies to drive down costs, improve yields and to develop viable mask to wafer transfer patterns.Yield is ultimately connected to process latitude, which is limited by a variety of electron-material interaction issues. As in the optical world, the question is how to maximize the process window considering all the systematic and statistical error sources. Simulation can be used to find out the magnitude of yield limiting effects, and to evaluate the contributing error sources such as PEC file contributions. Film stacks are now becoming an important contributor to statistical error due to technologies such as tri-tone attenuated masks that place a thin layer of chrome over MoSi.In this paper we will compare the SELID E-beam simulation to cross-sections of line-space and contact patterns. Demonstrations of simulation to real data and the use of simulation to further evaluate process window to enhance the learning mode during development cycles will be presented.
Obtaining highly aggressive resolution with E-Beam direct writing needs accurate simulation tools. SIGMA-C software SELID TM allows simulating patterns profiles transferred into a resist film in the case of a Shaped Beam system. However EBeam tools that allow achieving very high resolution, especially for dense patterns, are Gaussian Beam systems. This article deals with the comparison of experimental lines obtained with a Gaussian Beam writing system and with simulation by SELID TM of such lines. A negative chemically amplified photo resist (NEB22, Sumitomo) was exposed by our Leica UHR 100 keV. By using a high beam step size with a Gaussian spot 5 nm of FWHM (Full Width at Half Maximum), we showed that Shaped Beam simulations obtained with SELID TM are accurate compared to experiments.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.