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An individual magnetic atom doped into a semiconductor is a promising building block for bottom-up spintronic devices and quantum logic gates. Moreover, it provides a perfect model system for the atomic-scale investigation of fundamental effects such as magnetism in dilute magnetic semiconductors. However, dopants in semiconductors so far have not been studied by magnetically sensitive techniques with atomic resolution that correlate the atomic structure with the dopant's magnetism. Here we show electrical excitation and read-out of a spin associated with a single magnetic dopant in a semiconductor host. We use spin-resolved scanning tunnelling spectroscopy to measure the spin excitations and the magnetization curve of individual iron surface-dopants embedded within a two-dimensional electron gas confined to an indium antimonide (110) surface. The dopants act like isolated quantum spins the states of which are governed by a substantial magnetic anisotropy that forces the spin to lie in the surface plane. This result is corroborated by our first principles calculations. The demonstrated methodology opens new routes for the investigation of sample systems that are more widely studied in the field of spintronics-that is, Mn in GaAs (ref. 5), magnetic ions in semiconductor quantum dots, nitrogen-vacancy centres in diamond and phosphorus spins in silicon.

This Conceptual Design Report describes LUXE (Laser Und XFEL Experiment), an experimental campaign that aims to combine the high-quality and high-energy electron beam of the European XFEL with a powerful laser to explore the uncharted terrain of quantum electrodynamics characterised by both high energy and high intensity. We will reach this hitherto inaccessible regime of quantum physics by analysing high-energy electron-photon and photon-photon interactions in the extreme environment provided by an intense laser focus. The physics background and its relevance are presented in the science case which in turn leads to, and justifies, the ensuing plan for all aspects of the experiment: Our choice of experimental parameters allows (i) field strengths to be probed where the coupling to charges becomes non-perturbative and (ii) a precision to be achieved that permits a detailed comparison of the measured data with calculations. In addition, the high photon flux predicted will enable a sensitive search for new physics beyond the Standard Model. The initial phase of the experiment will employ an existing 40 TW laser, whereas the second phase will utilise an upgraded laser power of 350 TW. All expectations regarding the performance of the experimental set-up as well as the expected physics results are based on detailed numerical simulations throughout.

The CALICE Semi-Digital Hadronic Calorimeter (SDHCAL) prototype, built in 2011, was exposed to beams of hadrons, electrons and muons in two short periods in 2012 on two different beam lines of the CERN SPS. The prototype with its 48 active layers, made of Glass Resistive Plate Chambers and their embedded readout electronics, was run in triggerless and power-pulsing mode. The performance of the SDHCAL during the test beam was found to be very satisfactory with an efficiency exceeding 90% for almost all of the 48 active layers. A linear response (within ± 5%) and a good energy resolution are obtained for a large range of hadronic energies (5-80 GeV) by applying appropriate calibration coefficients to the collected data for both the Digital (Binary) and the Semi-Digital (Multi-threshold) modes of the SDHCAL prototype. The Semi-Digital mode shows better performance at energies exceeding 30 GeV.

a b s t r a c tUsing multi-channel time-resolved current measurements (multi-TCT), the charge collection of p þ n silicon strip sensors for electron-hole pairs produced close to the Si-SiO 2 interface by a focussed subnanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and the rear electrode as a function of the position of the light spot are described by a model which allows a quantitative determination of the charge losses and of the widths of the electron-accumulation and hole-inversion layers close to the Si-SiO 2 interface. Depending on the applied bias voltage, biasing history and environmental conditions, like humidity, incomplete electron or hole collection and different widths of the accumulation layers are observed. In addition, the results depend on the time after biasing the sensor, with time constants which can be as long as days. The observations are qualitatively explained with the help of detailed sensor simulations. Finally, their relevance for the detection of X-ray photons and charged particles, and for the stable operation of segmented p þ n silicon sensors is discussed.