The metastable α-phase GaO is an emerging material for developing solar-blind photodetectors and power electronic devices toward civil and military applications. Despite its superior physical properties, the high quality epitaxy of metastable phase α-GaO remains challenging. To this end, single crystalline α-GaO epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-GaO/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated. The device exhibits self-powered functions with a dark current lower than 1 pA, a UV/visible rejection ratio of 10 and a detectivity of 9.66 × 10 cm Hz W. Dual responsivity bands with cutoff wavelengths at 255 and 375 nm are observed with their peak responsivities of 0.50 and 0.071 A W at -5 V, respectively. High photoconductive gain at low bias is governed by a barrier lowing effect at the Au/GaO and GaO/ZnO heterointerfaces. The device also allows avalanche multiplication processes initiated by pure electron and hole injections under different illumination conditions. High avalanche gains over 10 and a low ionization coefficient ratio of electrons and holes are yielded, leading to a total gain over 10 and a high responsivity of 1.10 × 10 A W. Such avalanche heterostructures with ultrahigh gains and bias-tunable UV detecting functionality hold promise for developing high performance solar-blind photodetectors.

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