The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C 3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency.

We present a combined experimental and theoretical study on the unoccupied surface electronic structure of the Tl/Si(111) surface. Spin- and angle-resolved inverse-photoemission measurements with sensitivity to both the in-plane and the out-of-plane polarization direction detect a spin-orbit-split surface state, which is well described by theoretical calculations. We demonstrate that the spin polarization vector rotates from the classical in-plane Rashba polarization direction around Γ[over ¯] to the direction perpendicular to the surface at the K[over ¯](K[over ¯]') points-a direct consequence of the symmetry of the 2D hexagonal system. A giant splitting in energy of about 0.6 eV is observed and attributed to the strong localization of the unoccupied surface state close to the heavy Tl atoms. This leads to completely out-of-plane spin-polarized valleys in the vicinity of the Fermi level. As the valley polarization is oppositely oriented at the K[over ¯] and K[over ¯]' points, backscattering should be strongly suppressed in this system.

The Tl/Si(111)-(1 × 1) surface features outstanding properties with a unique spin pattern in momentum space. Along¯ K (¯ K ), surface states with rotating spin had been observed. Here, the focus is put on the unoccupied surface electronic structure along the¯ M high-symmetry direction. Spin-and angle-resolved inversephotoemission experiments with sensitivity to the in-plane and out-of-plane components of the spin-polarization vector are conducted with the help of our recently developed rotatable spin-polarized electron source (ROSE). In agreement with our theoretical findings, we identify a surface resonance with giant spin-orbit-induced spin splitting, which exhibits an exclusive Rashba-type spin texture, i.e., a pure in-plane spin polarization perpendicular to¯ M , in compliance with the mirror-plane symmetry of the¯ M direction. Notably, for slight deviations from the high-symmetry line, this constraint is lifted and additional spin-polarization components emerge. This highlights the importance of a correct alignment of the experiment when investigating samples with spin textures that are more complex than in simple Rashba systems or in ferromagnets.

We present a ROtatable Spin-polarized Electron source (ROSE) for the use in spin- and angle-resolved inverse-photoemission (SR-IPE) experiments. A key feature of the ROSE is a variable direction of the transversal electron beam polarization. As a result, the inverse-photoemission experiment becomes sensitive to two orthogonal in-plane polarization directions, and, for nonnormal electron incidence, to the out-of-plane polarization component. We characterize the ROSE and test its performance on the basis of SR-IPE experiments. Measurements on magnetized Ni films on W(110) serve as a reference to demonstrate the variable spin sensitivity. Moreover, investigations of the unoccupied spin-dependent surface electronic structure of Tl/Si(111) highlight the capability to analyze complex phenomena like spin rotations in momentum space. Essentially, the ROSE opens the way to further studies on complex spin-dependent effects in the field of surface magnetism and spin-orbit interaction at surfaces.

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