Electrical conductivities of aluminum nitride (AIN) doped with various ions of different sizes and valences have been measured at elevated temperatures. Grain conductivities of samples doped with large cations, obtained from complex impedance patterns, were much higher than those doped with small cations. The temperature dependence of electrical conductivity showed two regions having different activation energies. It was proposed that the precipitated impurities play a decisive role in the electrical conduction of AIN.
Work function and thermal stability of reactive sputtered Ti1−xAlxNy films were investigated for a metal gate electrode using a metal–oxide–semiconductor (MOS) structure. It is found that the work function (ΦM) values of Ti1−xAlxNy are ranged from 4.36 to 5.13 eV with a nitrogen partial flow rate (fN2). The ΦM values of Ti1−xAlxNy films, 4.36 eV for nMOS (n-Ti1−xAlxNy) and 5.10–5.13 eV for pMOS (p-Ti1−xAlxNy), may be applicable to dual metal gate electrodes. Excellent thermal stability up to 1000 °C was obtained on SiO2 as observed by the negligible change of capacitance equivalent thickness and Al 2p core level spectra for p-Ti1−xAlxNy (y∼1.0,fN2=50%), whereas a limited stability was attained in case of n-Ti1−xAlxNy (fN2⩽40%). The p-Ti1−xAlxNy can be a good candidate for pMOS device feasibility because of good thermal stability, while the n-Ti1−xAlxNy may be applicable for nMOS gate electrode in low thermal devices using damascene gate process.
Highly scalable saddle-fin cell transistor(S-Fin) has been successfully developed by combining FinFET with recess channel array transistor(RCAT). The S-Fin is simply integrated by dryetching techniques and the desirable threshold voltage is easily obtained. The S-Fin exhibits feasible transistor characteristics such as excellent short channel effect, driving current, and refresh characteristics as compared with both RCAT and damascene-FinFET. We suggest the S-Fin is a very promising transistor structure for the sub-50nm DRAM technology.
Complex impedance patterns of aluminum nitride (AIN) doped with various ions of different ionic sizes and valences have been examined at temperatures between 400" and 950°C. The patterns showed distinct differences between samples doped with ions of different sizes. Grain and grain boundary contributions to the resistance and capacitance were compared. It was found that the grain boundary: grain resistance ratio increases with density, Samples doped with large cations have higher effective dielectric constants at the grain boundary than samples doped with small cations or undoped samples, indicating a thinner grain-boundary layer.
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