Abstract:We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the Cband and O-band.
Abstract-We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 µm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.
We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, surface leakage current and bulk leakage current were separated, and their activation energies were extracted. Surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and (reverse bias) voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling.
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