ANNEALING OF INTERFACE TRAPS 681progress, and when there is no hydrogen in the annealing ambient.We have developed an annealing model based on the assumptions that the hydrogen is molecular and that it is in equilibrium with the traps at all observed times. The model is used to calculate the decay of the interface trap density as a function of time for a particular value of the hydrogen diffusivity in the oxide. By fitting the experimental data to the model, we obtain a value for the hydrogen diffusivity that agrees well with the value measured by Schols and Maes (6).
Si-BP-Si double heterojunction was obtained through the alternate growth of BP and Si on a Si substrate. After BP was grown epitaxially and then covered with Si3N4, it was heat treated at the stoichiometric temperature of 1050 °C. Thermal emission Ohmic current and thermal emission field current were observed for the n+Si(epi)-BP-n+Si(sub) and the p+Si(epi)-BP-p+Si(sub) structures, where the BP is depleted. Analysis of the current gives the barrier height of V0=0.4–0.6 V and an electron or a hole drift mobility of μ=70 cm2/Vs in the BP depleted.
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