This paper reports the Joule heating and Peltier effects in thermoelectric spin-transfer torque MRAMs (TSTT-MRAMs). The simulation was undertaken based on the current-induced magnetization switching at the MgO/CoFe magnetic tunnel junction. Thermal and heat flux distributions of the TSTT-MRAM cells were simulated and analyzed using finite-element modeling. The Joule heating and Peltier effects lead to the increases in the temperature and heat flux distributions at the magnetic tunnel junction (MTJ) as well as the thermoelectric module. The maximum temperature of Peltier effect is higher than Joule heating effect when voltage amplitude below 0.77V. Some practical data for the STT-MRAM were also reported.
In this paper, the electrical properties of materials were evaluated using a microstrip patch sensor. The sensor was designed for the operating frequency in range of 1.5 to 3 GHz on a DiClad 880 substrate with the permittivity of 2.2. The resonant frequency of the design sensor ,as well as the magnitude of the reflection spectra S11, were analyzed and then simulated three-dimensional finite element modeling when,. The result shows that the increase of the dielectric constant (εr) and conductivity (σ) of the material under test (MUT) led to the significant change of the resonant frequency. Thus, the resonant frequency may be used to evaluate the moisture content of the agricultural products.
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