By spectral phase shaping of both the pump and probe pulses in coherent anti-Stokes Raman scattering (CARS) spectroscopy we demonstrate the extraction of the frequencies, bandwidths and relative cross sections of vibrational lines. We employ a tunable broadband Ti:Sapphire laser synchronized to a ps-Nd:YVO mode locked laser. A high resolution spectral phase shaper allows for spectroscopy with a precision better than 1 cm -1 in the high frequency region around 3000 cm -1. We also demonstrate how new spectral phase shaping strategies can amplify the resonant features of isolated vibrations to such an extent that spectroscopy and microscopy can be done at high resolution, on the integrated spectral response without the need for a spectrograph.
Chemically selective microscopy based on broadband coherent anti-Stokes Raman scattering (CARS) is demonstrated on a mixed sample of 4 m diameter polystyrene (PS) and poly (methyl methacrylate) (PMMA) beads. The CARS signal from the PS or the PMMA beads is enhanced or suppressed, depending on the phase profile applied to the broadband spectrum. Using a combination of negative and positive (sloped)-phase steps the purely nonresonant background signal is removed.
The design and operation of a high-resolution spectral phase shaper with a footprint of only 7 ϫ 10 cm 2 is presented. The liquid-crystal modulator has 4096 elements. More than 600 independent degrees of freedom can be positioned with a relative accuracy of 1 pixel. The spectral shaping of pulses from a broadband Ti:sapphire laser is verified by a hybrid cross-frequency-resolved optical gating/Grenouille measurement and intensity autocorrelation. We demonstrate the ability to split one pulse into two or more pulses with a programmable delay of more than 8.5 ps. To our knowledge this represents the most compact high resolution device in liquid-crystal modulator-based shaping to this date.
Currently, three MAPPER multi-electron beam lithography tools are operational. Two are located at customers, TSMC and LETI, and one is located at MAPPER. The tools at TSMC and LETI are used for process development. These tools each have 110 parallel electron beams and have demonstrated sub-30 nm half pitch resolution in chemically amplified resists [5].One important step towards the high volume tool is the capability to stitch the exposure of one electron beam to the next. The pre-alpha tool at MAPPER has been upgraded with an interferometer to enable exposures with a scanning stage and demonstrate first beam-to-beam stitching. A scan of 200 micrometers has been used to create a stitch area of 50 x 3 microns. The stitch error over all stitches was found to be below 25 nm.The electron beam position stability during the 10 seconds required for beam-to-beam stitching showed a contribution to the stitch error of 2.3 nm. The beam separation measurement, used to correct the static error, adds about 2.2 nm and the stage stability and linearity adds another 5 nm in the scan (interferometer) direction. In the perpendicular direction the stage instability gives the largest contribution to the stitch error (15 nm) due to the use of capacitive sensors.Overall, the electron beam stability and the beam position correction method work correctly and with sufficient accuracy for the high volume tool, 'Matrix'. The wafer stage for the Matrix system will incorporate full interferometer control to attain the needed positioning accuracy and stability.
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