In PbSe epitaxial thin films grown by thermal evaporation on KCl(001) substrates and covered with an EuS protective layer, oscillatory dependences of the galvanomagnetic and thermoelectric properties (electrical conductivity σ, the Hall coefficient RH, charge carrier mobility μ, and the Seebeck coefficient S) on the PbSe layer thickness d (3<d<200 nm) were observed at room temperature. Oscillations of the transport properties are associated with quantum size effects due to electron confinement in the PbSe quantum wells.

Oscillatory thickness dependences of the electrical conductivity, Hall coefficient, charge carrier mobility, and Seebeck coefficient were obtained at room temperature for n-type thin Bi films (d=3–300 nm) fabricated by the thermal evaporation of a bismuth crystal in a vacuum and deposition on mica substrates at 380 K. We attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.

Oscillatory behaviour was detected in the dependences of the transport properties (electrical conductivity, Hall coefficient, charge carrier mobility, Seebeck coefficient and thermoelectric power factor) on the PbTe layer thickness d (d = 2–200 nm) in (001) KCl/PbTe/EuS quantum well (QW) structures at room temperature. The non-monotonic character of these dependences is attributed to quantum size effects, which manifest themselves in PbTe QWs at sufficiently small values of d. The positions of the extrema in the thickness dependences of the transport properties shift with changing electron concentration in PbTe QWs.

The effect of oxidation at room temperature on the thermoelectric properties of PbSe/KCl (001) thin films prepared by thermal evaporation was investigated. The dependences of the electrical conductivity, the Hall coefficient, charge carrier mobility, and thermopower on the PbSe layer thickness (d ϭ 4-200 nm) were obtained. An inversion of the sign of the dominant carriers from n to p at d ϳ 80 nm was observed under decreasing d. The d dependences of the thermoelectric properties were interpreted, taking into consideration the oxidation processes at the film/air interface within the framework of models considering both n-type and p-type carriers.

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