The origin of the thermal instability of the AlInAs/GaInAs system is identified and a novel method to recover the thermal degradation is also demonstrated. The thermal diffusion of fluorine into the Si-doped AlInAs layer is found to be the main cause of the electrical deterioration of this system. This finding has led to a method to recover the thermal degradation by purging the fluorine off using the reannealing in the ultrahigh-vacuum condition. This method is now potentially becoming a good candidate as a tip for the AlInAs/GaInAs devices fabrication including laser diode and high electron mobility transistor.
Drape is a characteristic behaviour of flexible cloth, so it is important in modelling cloth. The paper introduces a novel method to model drape using a few shape parameters, predicted according to the pattern structure and mechanical properties of cloth. The technique is used to visualize the 3-D drapeability of cloth and is then extended to simulation of a skirt. The general shape of a flared skirt of large deformation is predicted based on several shape parameters. Moreover, the constructed skirt model is used as pre-draped initial shape for the popular physically-based model ± particle system. Kawabata Evaluation System (KES) plots of cloth are applied for accurate mechanical calculation. The simulated results show good agreement with actual cloth materials.
We have developed a new solar cell using thin-film silicon supported by a silicon substrate etched in a grid form. The light-trapping structures of this cell have been studied by considering rear surface light reflections, electrical power loss and mechanical strength. High rear reflectance can be obtained by employing a multi-layer rear electrode. The pattern of the rear substrate is designed to provide sufficient mechanical strength and to minimize the electrical power loss, taking account of the current flow path. A conversion efficiency of 14.2% for a practical size of 10×10 cm2 is obtained by applying these calculated parameters using a single-crystal silicon substrate.
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