We report a study of the change in lattice constant when single-crystal silicon is substitutionally doped with boron. The measurements were made using lo-pm-thick epilayers with boron concentrations (Ns) in the range 1.7~ 1019-1.2x 102' cm p3. The influence of elastic strain in the epilayers and their substrates was eliminated by including Bragg reflections from planes that were inclined to the (100) surface. We obtained a value for the lattice contraction coefficient fi= (5.19=!=0.09) X1O-24 cm3, where the range is f. one standard error. Specimens with Ns~2 X lOI9 cme3 were strained to give coherent interfaces with their substrates. Evidence for relaxation (presumably by misfit dislocations at the interface) was observed with Nns5 X 1019 cm -3 (corresponding to a lattice mismatch of approximately 2.5 X 10w4), but this occurred in a patchy fashion and remained incomplete while Na was increased to 1.2X lo*' cmh3 [corresponding to a mismatch of 6.5 X 10w4). This partial relaxation occurred at somewhat smaller mismatches than would be expected from reported studies of silicon-germanium alloy epilayers on silicon substrates. Our technique for analyzing a set of Bragg reflections to separate the effects of elastic strain and lattice mismatch appears to be novel and has general applicability to the study of epilayer/substrate combinations.
Light emission from metal-insulator-metal tunnel junctions is enhanced using two schemes for improving photon-surface plasmo coupling. Results reported here establish that the light emission arises from radiative decay of junction surface plasmon modes excited by inelastic electron tunneling. The enhanced light-emitting tunnel junctions have an external quantum efficiency in the 10−5 range.
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