The present work contains preliminary results of investigations of the gaseous phase composition in the course of preparation of SIC layers. The layers were deposited by decomposition ofCH3SiCI3 diluted in the Ar streamduring CVD process. FuR spectra of the gaseous phase were recorded using a special reaction cell, at short time intervals and at various temperatures ranging from 300Kto 1200K. Transition products ofthereaction in the gasphase(SiCL and CH molecules) were observed athigher temperatures. The final product of the reaction, in the gaseous phase, i.e. HCI was also detected.
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