Magnetron sputtered nanocrystalline SnO 2 thin films annealed at 500 C during 4 h were investigated by X-ray diffraction, electron microscopy and electrical methods. The comparison of calculated Debye length and experimentally measured grain size was used for the determination of electron transport mechanism in the wide temperature range from 20 to 400 C . The investigation of gas-response SnO 2 films as a function of ethanol concentration was used in the modeling of surface processes in SnO 2 polycrystalline layers.
A new method for the investigation of deep centres in piezosemiconductors via internal friction measurements is discussed. The method called deep level electro‐mechanical resonance (DLEMR) is based on the piezoelectric coupling of a charge relaxation influenced by the deep centres with the mechanical non‐elasticity measured and seems to be an approximate, unexpensive and non‐destructive tool for probing high‐resistive materials and hidden layers. Possibilities of an interpretation of the observed relaxation time which is shown to be neither the Maxwell time of dielectric relaxation nor the carrier thermal emission time from the deep centres are discussed.
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