The response of a graphene-based humidity sensor is considered as a function of film structures. Analysis of the resistance changes due to water molecule adsorption on the graphene or multi-layer graphene (MLG) surface is performed for films with different structures and resistivities from hundreds of ohms/sq to hundreds of kilo-ohms/sq. The results revealed possible increase, decrease and non-monotonous behavior of resistance with changes in film structure. Adsorption of water molecules at grain boundary defects is assumed to lead to an increase in film resistivity due to the donor property of water and the p-type conductivity of graphene. Another type of conductive center with a higher capture cross-section is realized in the case of water molecule adsorption at edge defects in MLG films (the formation of conductive chains with ionic conductivity). If these chains form a continuous network the film resistivity decreases. The result of the competition between the opposite effects of the conductivity compensation and formation of the water-based conductive chains depends on the film structure and determines the response of humidity sensors. Sensor sensitivity is found to increase when only one type of defect determines water adsorption (edge defects or grain boundary defects).
In the present study, we have examined the interaction between a suspension of graphene in dimethylformamide and an aqueous solution of hydrofluoric acid, which was found to result in partial fluorination of suspension flakes. A considerable decrease in the thickness and lateral size of the graphene flakes (up to 1-5 monolayers in thickness and 100-300 nm in diameter) with increasing duration of fluorination treatment is found to be accompanied by a simultaneous transition of the flakes from the conducting to the insulating state. Smooth and uniform insulating films with a roughness of ∼2 nm and thicknesses down to 20 nm were deposited from the suspension on silicon. The electrical and structural properties of the films suggest their use as insulating elements in thin-film nano- and microelectronic device structures. In particular, it was found that the films prepared from the fluorinated suspension display rather high breakdown voltages (field strength of (1-3) × 10(6) V cm(-1)), ultralow densities of charges in the film and at the interface with the silicon substrate in metal-insulator-semiconductor structures (∼(1-5) × 10(10) cm(-2)). Such excellent characteristics of the dielectric film can be compared only to well-developed SiO2 layers. The films from the fluorinated suspension are cheap, practically feasible and easy to produce.
The band structure and electric properties of films created from a partially fluorinated graphene suspension are analyzed in this paper. As may be inferred from the structural study, graphene islands (quantum dots) are formed in these films. Various types of negative differential resistance (NDR) and a step-like increase in the current are found for films created from the fluorinated graphene suspension. NDR resulting from the formation of the potential barrier system in the film and corresponding to the theoretical prediction is observed for a relatively low fluorination degree. The origin of the NDR varies with an increase in the fluorination degree of the suspension. The observation of NDR in the fluorinated films widens the range of application of such films, including as active device layers fabricated using 2D printed technologies on rigid and flexible substrates.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.