Improving charge transport and reducing bulk/ surface recombination can increase the activity and stability of BiVO 4 for water oxidation. Herein we demonstrate that the photoelectrochemical (PEC) performance of BiVO 4 can be significantly improved by potentiostatic photopolarization. The resulting cocatalyst-free BiVO 4 photoanode exhibited a record-high photocurrent of 4.60 mA cm À2 at 1.23 V RHE with an outstanding onset potential of 0.23 V RHE in borate buffer without a sacrificial agent under AM 1.5G illumination. The most striking characteristic was a strong "self-healing" property of the photoanode, with photostability observed over 100 h under intermittent testing. The synergistic effects of the generated oxygen vacancies and the passivated surface states at the semiconductor-electrolyte interface as a result of potentiostatic photopolarization reduced the substantial carrier recombination and enhanced the water oxidation kinetics, further inhibiting photocorrosion.
Increasing long‐term photostability of BiVO4 photoelectrode is an important issue for solar water splitting. The NiOOH oxygen evolution catalyst (OEC) has fast water oxidation kinetics compared to the FeOOH OEC. However, it generally shows a lower photoresponse and poor stability because of the more substantial interface recombination at the NiOOH/BiVO4 junction. Herein, we utilize a plasma etching approach to reduce both interface/surface recombination at NiOOH/BiVO4 and NiOOH/electrolyte junctions. Further, adding Fe2+ into the borate buffer electrolyte alleviates the active but unstable character of etched‐NiOOH/BiVO4, leading to an outstanding oxygen evolution over 200 h. The improved charge transfer and photostability can be attributed to the active defects and a mixture of NiOOH/NiO/Ni in OEC induced by plasma etching. Metallic Ni acts as the ion source for the in situ generation of the NiFe OEC over long‐term durability.
Although much effort has been devoted to improving photoelectrochemical water splitting of hematite (α-Fe2O3) due to its high theoretical solar-to-hydrogen conversion efficiency of 15.5%, the low applied bias photon-to-current efficiency remains a huge challenge for practical applications. Herein, we introduce single platinum atom sites coordination with oxygen atom (Pt-O/Pt-O-Fe) sites into single crystalline α-Fe2O3 nanoflakes photoanodes (SAs Pt:Fe2O3-Ov). The single-atom Pt doping of α-Fe2O3 can induce few electron trapping sites, enhance carrier separation capability, and boost charge transfer lifetime in the bulk structure as well as improve charge carrier injection efficiency at the semiconductor/electrolyte interface. Further introduction of surface oxygen vacancies can suppress charge carrier recombination and promote surface reaction kinetics, especially at low potential. Accordingly, the optimum SAs Pt:Fe2O3-Ov photoanode exhibits the photoelectrochemical performance of 3.65 and 5.30 mA cm−2 at 1.23 and 1.5 VRHE, respectively, with an applied bias photon-to-current efficiency of 0.68% for the hematite-based photoanodes. This study opens an avenue for designing highly efficient atomic-level engineering on single crystalline semiconductors for feasible photoelectrochemical applications.
Photostability is one of the most essential properties for evaluating photoelectrochemical (PEC) water splitting performance on semiconductors. Herein, the oxygen‐deficiency conditions are applied to tune and activate BiVO4 photoanodes with a class of oxygen vacancies across the whole bulk material, and regulate the electronic occupancy of these states upon the charge carrier processes that determine PEC water oxidation activity. Through the experimental results and nonadiabatic molecular dynamics with time‐domain density functional theory calculations, the charge carrier lifetime can be influenced by the oxygen vacancies concentration on BiVO4, and the semiconductor can be flexibly photoactivated under oxygen‐sufficient and deficient atmospheres for enhancing the charge carrier density and photovoltage. The PEC performance of BiVO4 is further boosted by Pt doping, which exhibits a record photocurrent density of 5.45 mA cm–2 at 1.23 VRHE with solar conversion efficiency of 2.1% at 0.65 VRHE. The Pt can prevent the unnecessory charge recombination on the defected BiVO4, which also enhances the majority charge carrier density, resulting in one of the best charge separation efficiencies, close to 100%, among the steady‐state PEC performance for BiVO4. More importantly, the resulting Pt:BiVO4 presents long‐term stability over 50 h at 0.8 VRHE.
Ap hotocharge/discharge strategy is proposed to initiate the WO 3 photoelectrode and suppress the main charge recombination, whichr emarkably improves the photoelectrochemical (PEC) performance.T he photocharged WO 3 surrounded by a8 -10 nm overlayer and oxygen vacancies could be operated more than 25 cycles with 50 hd urability without significant decayonPEC activity.Aphotocharged WO 3 /CuO photoanode exhibits an outstanding photocurrent of 3.2 mA cm À2 at 1.23 V RHE with al ow onset potential of 0.6 V RHE ,whichisone of the best performances of p-n heterojunction structure.U sing nonadiabatic molecular dynamics combined with time-domain DFT,w ec larify the prolonged charge carrier lifetime of photocharged WO 3 ,a sw ell as how electronic systems of photocharged WO 3 /CuO semiconductors enable the effective photoinduced electrons transfer from WO 3 into CuO.T his work provides af easible route to address excessive defects existed in photoelectrodes without causing extra recombination.
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