A new solar energy storage system is designed and synthesized based on phase-changing microcapsules incorporated with black phosphorus sheets (BPs). BPs are 2D materials with broad light absorption and high photothermal performance, which are synthesized and covalently modified with poly(methyl methacrylate) (PMMA) to produce the PMMA-modified BPs (mBPs). With the aid of PMMA, the mBPs and phase-changing materials (PCM, eicosane) are encapsulated together to form microcapsules. The microencapsulated eicosane and mBPs (mBPs-MPCM) composites exhibit a high latent heat of over 180 kJ kg −1 , good thermal reliability, as well as excellent photothermal characteristics inherited from BPs. Owing to the direct contact in the integrated mBPs-MPCM composites, the thermal energy generated by mBPs is transferred to eicosane immediately giving rise to three times higher efficiency in solar energy storage compared to microcapsules with mBPs on the surface. The mBPs-MPCM composites have great potential in solar energy storage applications and the concept of integrating photothermal materials and PCMs as the core provides insights into the design of high-efficiency solar energy storage materials. Solar energy is one of the most important renewable energy sources in the continuous efforts to meet the ever-increasing global energy demand [1,2] and techniques that capture solar
Although perovskite wafers with a scalable size and thickness are suitable for direct X‐ray detection, polycrystalline perovskite wafers have drawbacks such as the high defect density, defective grain boundaries, and low crystallinity. Herein, PbI2‐DMSO powders are introduced into the MAPbI3 wafer to facilitate crystal growth. The PbI2 powders absorb a certain amount of DMSO to form the PbI2‐DMSO powders and PbI2‐DMSO is converted back into PbI2 under heating while releasing DMSO vapor. During isostatic pressing of the MAPbI3 wafer with the PbI2‐DMSO solid additive, the released DMSO vapor facilitates in situ growth in the MAPbI3 wafer with enhanced crystallinity and reduced defect density. A dense and compact MAPbI3 wafer with a high mobility‐lifetime (µτ) product of 8.70 × 10−4 cm2 V−1 is produced. The MAPbI3‐based direct X‐ray detector fabricated for demonstration shows a high sensitivity of 1.58 × 104 µC Gyair−1 cm−2 and a low detection limit of 410 nGyair s−1.
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