The external quantum efficiency of organic light-emitting diodes (OLEDs) is limited by several loss mechanisms. By applying a numerical model for the efficiency analysis of OLED devices, we analyze the distribution of the different energy loss mechanisms in bottom and top emission organic light-emitting diodes. We validate the findings by the comparison with experimental data measured on red state-of-the-art p-i-n devices containing the red phosphorescent emitting dye iridium(III)bis[2-methyldibenzo-(f, h)quinoxaline](acetylacetonate) [Ir(MDQ)2(acac)]. The model is used to design extremely efficient bottom and top emission diodes with 21% and 27% external quantum efficiencies, respectively.

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We investigate the doping behavior of the strongly electron accepting molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane coevaporated with the host molecule N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzidine by photoemission spectroscopy and conductivity measurements. Using interface resolved measurements, we compare the alignment on different substrates and investigate the effects of varying doping concentrations on the Fermi level position. We find that at high doping concentrations the Fermi level gets pinned at the exponentially decaying tail of the highest occupied molecular orbital and compare these results with different dopants and host molecules. The measurement of the doping dependent space charge layer thickness yields information on the amount of free charge carriers and thereby the efficiency of the doping.

We demonstrate extremely stable and highly efficient red p-i-n-type organic light emitting diodes (OLEDs) based on an iridium-based electrophosphorescent dye in suitable host materials. The OLEDs reach lifetimes well above 1×107h at 100cd∕m2 initial luminance and reach at the same time a performance of 12.4% external quantum efficiency. This high lifetime is attributed to a combination of the low current density needed to reach a certain luminance and to the high stability of the materials against both charge carriers and excitons.

We discuss the importance of appropriate charge carrier confinement and exciton management for the realization of highly efficient and stable organic light-emitting diodes (OLEDs). As an example, we choose red p-i-n-type OLEDs based on the iridium-based electrophosphorescent emitter Ir(MDQ)2(acac) doped in α-NPD as host material. We show how an appropriate choice of the hole blocking layer material allows external quantum efficiencies as high as 20% for this emitter. At the same time, the display-relevant brightness of 100 cd/m2 is reached at an operation voltage of only 2.4 V, which is close to the thermodynamic limit. As a result, a high total power efficiency of 37.5 lm/W at 100 cd/m2 is reached. In a further step, we study the influence of the blocker materials on device lifetime. We investigate the chemical reactions causing the degradation process by use of matrix assisted laser desorption time-of-flight mass spectrometry. It can be shown that discovered degradation reactions can be suppressed by an appropriate choice of the hole blocking material.