Thermally stimulated luminescence (TL), cathodoluminescence (CL) and Raman spectroscopy of CVD diamond films grown on silicon substrates have been studied in order to obtain information on defects created during the growth, which induce the levels within the gap. TL between 300 K and 700 K, and CL from 200 nm to 1200 nm have been teasured. The glow curves show a peak located around 610 K with different intensities, depending on the sample thickness, associated with a trap of energy, equal to 0.83 eV and with attempt-to-escape-time of the order of 108 s-1. Broad CL bands observed at 428±1 nm (2.90 ±0.01 eV) and 500±1 nm (2.47±0.004 eV) are attributed to closely spaced and widely separated donor-acceptor (D-A) pairs, respectively. The TL and CL results were correlated with diamond quality estimated from Raman spectroscopy measurements.
Natural diamond has been considered as a perspective material for clinical radiation dosimetry due to its tissuebiocompatibility and chemical inertness. However, the use of natural diamond in radiation dosimetry has been halted by the high market price. The recent progress in the development of CVD techniques for diamond synthesis, offering the capability of growing high quality diamond layers, has renewed the interest in using this material in radiation dosimeters having small geometrical sizes. Polycrystalline CVD diamond films have been proposed as detectors and dosimeters of β and α radiation with prospective applications in high-energy photon dosimetry. In this work, we present a study on the TL properties of undoped diamond film samples grown by the hot filament CVD (HF CVD) method and exposed to β and α radiation. The glow curves for both types of radiation show similar character and can be decomposed into three components. The dominant TL peaks are centered at around 610 K and exhibit activation energy of the order of 0.90 eV.
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