CMOS analog stress sensor circuits based upon the piezoresistive behavior of MOSFETs are proposed. On the (1 00) surface, these circuits provide temperature compensated output voltages and currents that are proportional to the inplane normal stress difference ( . ; -0i2 ) and the in-plane shear stress oI2. The circuits offer high sensitivity to stress, highly localized stress measurement and provide direct voltage or current outputs, eliminating the need for tedious AR/R measurements required with more traditional resistor rosettes.
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