This paper describes the operation of a vacuum packaged resonant accelerometer subjected to static and dynamic acceleration testing. The device response is in broad agreement with a new analytical model of its behavior under an applied time-varying acceleration. Measurements include tests of the scale factor of the sensor and the dependence of the output sideband power and the noise floor of the double-ended tuning fork oscillators as a function of the applied acceleration frequency. The resolution of resonant accelerometers is shown to degrade 20 dB/decade beyond a certain characteristic acceleration corner frequency. A prototype device was fabricated at Sandia National Laboratories and exhibits a noise floor of 40 g/ Hz for an input acceleration frequency of 300 Hz.

Highly sensitive hydrogenated amorphous silicon (a-Si:H) microbolometer arrays have been developed that take advantage of the high temperature coefficient of resistance (TCR) of aSi:H and its relatively high optical absorption coefficient. TCR is an important design parameter and depends on material properties such as doping concentration. Ultra-thin (∼2000 Å) aSiNx:H/a-Si:H/ a-SiNx:H membranes with low thermal mass suspended over silicon readout integrated circuits are built using RF plasma enhanced chemical vapor deposition (PECVD) and surface micromachining techniques. The IR absorptance of the bolometer detectors is enhanced by using quarter-wave resonant cavity structures and thin-film metal absorber layers. To ensure high thermal isolation the microbolometer arrays are vacuum packaged using wafer level vacuum packaging. Imaging applications include a 120×160 a-Si:H bolometer pixel array IR camera operating at ambient temperature. Non-imaging applications are multi-channel detectors for gas sensing systems.

Vacuum packaging of high performance infrared (IR) MEMS uncooled detectors and arrays, inertial MEMS accelerometers and gyros, and radio frequency (rf) MEMS resonators is a key issue in the technology development path to low cost, high volume MEMS production. Wafer-level vacuum packaging transfers the packaging operation into the wafer fab. It is a product neutral enabling technology for commercialization of MEMS for home, industry, automotive, and environmental monitoring applications. 4 in. wafer-level vacuum packaging has been demonstrated using IR MEMS bolometers and results will be presented in this article. In addition to the wafer-level packaging results, vacuum package reliability results obtained on component-level ceramic vacuum packages will also be presented.

Vacuum packaging of high-performance surface-micromachined uncooled microbolometer detectors and focal-plane arrays (FPAs) for infrared imaging and nonimaging applications, inertial MEMS (microelectromechanical systems) accelerometers and gyroscopes, and rf MEMS resonators is a key issue in the technology development path to low-cost, high-volume MEMS production. In this article, two approaches to vacuum packaging for MEMS will be discussed. The first is component-level vacuum packaging, a die-level approach that involves packaging individual die in a ceramic package using either a silicon or germanium lid. The second approach is wafer-level vacuum packaging, in which the vacuum-packaging process is carried out at the wafer level prior to dicing the wafer into individual die. We focus the discussion of MEMS vacuum packaging on surface-micromachined uncooled amorphous silicon infrared microbolometer detectors and FPAs for which both component-level and wafer-level vacuum packaging have found widespread application and system insertion. We first discuss the requirement for vacuum packaging of uncooled a-Si microbolometers and FPAs. Second, we discuss the details of the component-level and wafer-level vacuum-packaging approaches. Finally, we discuss the system insertion of wafer-level vacuum packaging into the Raytheon 2000AS uncooled infrared imaging camera product line that employs a wafer-level-packaged 160 × 120 pixel a-Si infrared FPA.

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