For ultra-precision, large stroke, and high start/stop acceleration, a novel magnetic suspension platform with three types of magnetic bearings is proposed. The structure and working principle of the novel platform are introduced. The passive magnetic bearings are used to compensate for the weight of the actuator. The repulsive force of the passive magnetic bearing model is established and analyzed. The Lorentz force-type magnetic bearings are used to provide driving force and rotational torque in the XY-plane. The driving force model and rotational torque model are established. The electromagnetic suspension bearing is used to provide driving force in the Z-axis and rotational torque along the X-axis and Y-axis. A novel Halbach magnetic array is designed to improve the magnetic flux density in the air gap. The finite element method is used to validate the force model, torque model, and magnetic flux density in the air gap. The results show that the maximum force of the passive magnetic bearing is 79 N, and the rotational torque stiffness is 35 N/A in the XY-plane and 78 N/A along the Z-axis. The driving force stiffness is 91 N/A in the XY-plane and 45 N/A along Z-axis.
An ultra-flat heteroepitaxy α-Ga2O3 thin film, paved a glory future for device fabrication, was successfully obtained on a c-plane sapphire substrate through the employment of the mist chemical vapor deposition technique. Atomic force microscopy (AFM) measurements revealed an RMS roughness value of 0.309 nm when the carrier gas flow rate was set at 1500 sccm. Furthermore, the full-width at half maximum (FWHM) of the rocking curve was determined to be 43.2 arcsec, indicating a high level of crystallinity in the heteroepitaxy film. The growth rate was calculated as 13.22 nm/min through the use of cross-section SEM measurements. Additionally, the bandgap of the transparent film was determined to be 5.10 eV through transmittance spectra analysis. The high quality, wide bandgap heteroepitaxy α-Ga2O3 thin film described in this study represents a significant step forward in the preparation of high power and optoelectronic devices.
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