In this work, we have fabricated and evaluated a HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device to have multiple resistance states as a function of compliance current (CC). Reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. It was demonstrated that the presence of oxygen vacancies closer to the top electrode reduces the switching energy. Decreasing the thickness of the Al2O3 buffer layer, near the bottom electrode, increases the switching power requirement. It was also observed that the switching energy requirement could be altered by modifying the deposition process of the top metal layer.
A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al2O3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.
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