Quasi-two-dimensional (2D) perovskites promise the intrinsically stable solar cell performance. However, the crystal orientation and phase distribution in 2D solution processed perovskite are difficult to be manipulated, which restricts the device efficiency as well as its reproducibility. Here, we simply incorporate potassium ion (K + ) into quasi-2D precursor solution, which can dramatically change the nucleation steps during perovskite films spin-coating process probed by in-situ synchrotron-based grazing incident X-ray diffraction (GIXRD). It is notable that a desired vertical oriented 2D phase without intermediate compound can be easily formed after spin-coating, which simultaneously reduces the distribution of low dimensional 2D perovskite phases in association with suppressed trap states. Therefore, the power conversion efficiency of doped 10% K + 2D perovskite solar cells can yield up to 11.3% as well as long-term stable performance with high reproducibility. This work paves a key path to control the quasi-2D nucleation and crystallization processing via chemical additives.

Inkjet printing is a powerful technology for realizing high‐density pixelated perovskite light‐emitting diodes (PeLEDs). However, the coffee‐stain effect in the inkjet printing process often leads to uneven thickness and poor crystallization of printed perovskite features, which deteriorates the performance of PeLEDs. Here, a strategy is developed to suppress the coffee‐stain effect via enhancing Marangoni flow strength. An interfacial poly(vinylpyrrolidone) (PVP) layer is incorporated to tune the surface tension of the underlying hole transport layer (HTL) and enhance the perovskite crystallization. The substrate temperature is also carefully controlled to tune the printing solvent evaporation rate rationally. By optimizing the thickness of the PVP layer and the temperature of the printing stage, the coffee‐stain effect is dramatically restrained. In addition, the interfacial insulating PVP layers play a positive role in suppressing leakage current level of PeLEDs by avoiding any direct electrical contact between HTL and electron transporting layer. Finally, an inkjet‐printed PeLED with a brightness of 3640 cd m–2 and external quantum efficiency of 9.0% is achieved. This work highlights the availability of inkjet‐printing technology for fabricating patterned PeLEDs in information display applications.

ZnO nanofilm as a cathode buffer layer has surface defects due to the aggregations of ZnO nanoparticles, leading to poor device performance of organic solar cells. In this paper, we report the ZnO nanoparticles aggregations in solution can be controlled by adjusting the solvents ratios (chloroform vs methanol). These aggregations could influence the morphology of ZnO film. Therefore, compact and homogeneous ZnO film can be obtained to help achieve a preferable power conversion efficiency of 8.54% in inverted organic solar cells. This improvement is attributed to the decreased leakage current and the increased electron-collecting efficiency as well as the improved interface contact with the active layer. In addition, we find the enhanced maximum exciton generation rate and exciton dissociation probability lead to the improvement of device performance due to the preferable ZnO dispersion. Compared to other methods of ZnO nanofilm fabrication, it is the more convenient, moderate, and effective to get a preferable ZnO buffer layer for high-efficiency organic solar cells.

We used cesium stearate (CsSt) to modify the interface of the electron-extracting contact in inverted organic solar cells. Surface microstructure, optical properties, and electrical characterization as well as exciton generation rate and dissociation probability were investigated to understand the impact of CsSt on the interface contact. The results indicated that by incorporation of CsSt, the surface morphology and energy level as well as conductivity of a zinc oxide (ZnO) film were improved. On the basis of the above properties, highly efficient inverted organic solar cells have been demonstrated by using a ZnO nanoparticle film and CsSt stacked bilayer structure as the cathode interfacial layer. The insertion of a CsSt layer between the ZnO film and active layer improved the electron extraction efficiency, and a high power conversion efficiency (PCE) of 8.69% was achieved. The PCE was improved by 20% as compared to the reference device using a ZnO-only electron extraction layer.