A programming technique for controlling the floating gates (FGs) in ultra-low-voltage (ULV) floating-gate circuits is presented. Simple ULV FG current-scaling and level-shifting circuits are discussed. The current scaling and level shifting are accomplished using only minimum sized transistors and floating capacitors. Floating-gate current multiplier and divider circuits are described. Measured results are provided.
Abstract-Ultra-low-voltage (ULV) floating-gate differential amplifiers are presented. In this paper, we present several different approaches to CMOS ULV amplifier design. Sinh-shaped and tanh-shaped transconductance amplifiers are described. Measured results are provided.
We present some fundamental aspects on how UVprogrammed floating-gate (FGUVMOS) circuits may be simulated using the AIM-Spice or Eldo simulators and the BSIM3v3 model. We introduce ways of implementing FGUVMOS binary logic simpler than previously reported. Reduction in transistor and capacitor count for some simple NAND and NOR gates are from three to two MOSFETs, and four to three capacitors, respectively. We also show some aspects of a reconfigurable two-transistor circuit capable of computing the CARRY' function for a FULL-ADDER using two MOSFETs, which is more than 90 percent reduction in transistor count compared to earlier reported FGU-VMOS circuits.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.